In an $n$-type semiconductor:
- APentavalent impurities are dopants and holes are majority carriers.
- BTrivalent impurities are dopants and electrons are minority carriers.
- CPentavalent impurities are dopants and electrons are majority carriers.
- DTrivalent impurities are dopants and holes are majority carriers.
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The electron mobility in $N$-type germanium is $3900 \ cm^2/V \cdot s$ and its conductivity is $6.24 \ mho/cm$. If the effect of holes is negligible,what is the impurity concentration?
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