When phosphorus and antimony are mixed in germanium,then:

Electric conduction in a semiconductor takes place due to

When the temperature of a semiconductor increases,then:

$A$ crystal of intrinsic silicon at room temperature has a carrier concentration of $1.6 \times 10^{16} / m^3$. If the donor concentration level is $4.8 \times 10^{20} / m^3$, then the concentration of holes in the semiconductor is

The semiconductors are generally

In pure silicon at $300 \ K$ temperature,the concentration of electrons $n_e$ and holes $n_h$ is $1.5 \times 10^{16} \ m^{-3}$. By doping with Indium,$n_h$ is increased to $4.5 \times 10^{22} \ m^{-3}$. Calculate the concentration of electrons $n_e$ in the doped silicon.