Let ${n_h}$ and ${n_e}$ be the number of holes and conduction electrons respectively in a semiconductor. Then

  • A
    ${n_h} > {n_e}$ in an intrinsic semiconductor
  • B
    ${n_h} = {n_e}$ in an extrinsic semiconductor
  • C
    ${n_h} = {n_e}$ in an intrinsic semiconductor
  • D
    ${n_e} > {n_h}$ in an intrinsic semiconductor

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$A$ pure semiconductor crystal has $5 \times 10^{22}$ atoms per $cm^3$. It is doped by $1$ ppm concentration of pentavalent element. The number of holes in the doped semiconductor is (given that $n_i = 1.5 \times 10^{10} cm^{-3}$):

Pure $Si$ at $500\,K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16}\,m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22}\,m^{-3}$. The doped semiconductor is of

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To obtain electrons as majority charge carriers in a semiconductor,the impurity mixed is

In a $P$-type semiconductor,there is

In extrinsic $P$ and $N$-type semiconductor materials,the ratio of the impurity atoms to the pure semiconductor atoms is about

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