Mobilities of electrons and holes in a sample | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(B) The conductivity $\sigma$ of an intrinsic semiconductor is given by the formula:$\sigma = e(n_e \mu_e + n_h \mu_h)$Given:$e = 1.6 	imes 10^{-19}

Vedclass · Accepted Answer

$2$

Vedclass · Answer

(B) The conductivity $\sigma$ of an intrinsic semiconductor is given by the formula:$\sigma = e(n_e \mu_e + n_h \mu_h)$Given:$e = 1.6 	imes 10^{-19} \, C$$n_e = n_h = 2.5 	imes 10^{19} \, /m^3$$\mu_e = 0.35 \, m^2/V-s$$\mu_h = 0.18 \, m^2/V-s$Substituting the values:$\sigma = 1.6 	imes 10^{-19} 	imes (2.5 	imes 10^{19} 	imes 0.35 + 2.5 	imes 10^{19} 	imes 0.18)$$\sigma = 1.6 	imes 10^{-19} 	imes 2.5 	imes 10^{19} 	imes (0.35 + 0.18)$$\sigma = 1.6 	imes 2.5 	imes 0.53$$\sigma = 4 	imes 0.53 = 2.12 \, S/m$

Mobilities of electrons and holes in a sample of intrinsic $Ge$ at room temperature are $0.35 \, m^2/V-s$ and $0.18 \, m^2/V-s$ respectively. If the electron and hole densities are each equal to $2.5 \times 10^{19} \, /m^3$,the $Ge$ conductivity will be.....$S/m$ (in $.12$)

Similar Questions

In a $P-$type semiconductor,germanium is doped with

Pure silicon at $300 \ K$ has equal electron and hole concentration of $1.5 \times 10^{16} \ m^{-3}$. If the hole concentration increases to $3 \times 10^{22} \ m^{-3}$,then the electron concentration in the silicon is

To a germanium sample,traces of gallium are added as an impurity. The resultant sample would behave like

When the conductivity of a semiconductor is only due to the breaking of the covalent bonds,the semiconductor is called

If a small amount of antimony is added to germanium crystal,

Vedclass Test Series

Exam Paper Generator

Online Exam Module