Pure Si at 500, K has equal number of electro | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(A) $p-$type semiconductor is obtained when $Si$ or $Ge$ is doped with a trivalent impurity like Indium $(In)$.Given:Intrinsic carrier concentration,$

Vedclass · Accepted Answer

$p-$ type having electron concentration,$n_e = 5 	imes 10^9\, m^{-3}$

Vedclass · Answer

(A) $p-$type semiconductor is obtained when $Si$ or $Ge$ is doped with a trivalent impurity like Indium $(In)$.Given:Intrinsic carrier concentration,$n_i = 1.5 	imes 10^{16}\, m^{-3}$New hole concentration,$n_h = 4.5 	imes 10^{22}\, m^{-3}$Using the law of mass action for semiconductors:$n_e \cdot n_h = n_i^2$Substituting the values:$n_e = \frac{n_i^2}{n_h} = \frac{(1.5 	imes 10^{16})^2}{4.5 	imes 10^{22}}$$n_e = \frac{2.25 	imes 10^{32}}{4.5 	imes 10^{22}}$$n_e = 0.5 	imes 10^{10} = 5 	imes 10^9\, m^{-3}$Since $n_h > n_e$,the semiconductor is of $p-$type.

Pure $Si$ at $500\, K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16}\, m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22}\, m^{-3}$. The doped semiconductor is of

Similar Questions

Which of the following statements is incorrect?

In a pure silicon crystal,the electron-hole concentration is $10^{16} \ m^{-3}$ at $301 \ K$. Now,$10^{21}$ atoms of phosphorus are added per cubic metre. The new hole concentration in silicon is (in per $m^3$):

$A$ transistor is a/an

$A$ $P$-type semiconductor has acceptor levels $57 \; meV$ above the valence band. The maximum wavelength of light required to create a hole is (Planck's constant $h = 6.6 \times 10^{-34} \; J \cdot s$, speed of light $c = 3 \times 10^8 \; m/s$)

The semiconductors are generally

Vedclass Test Series

Exam Paper Generator

Online Exam Module