The $I-V$ characteristic of an $LED$ is represented by which of the following graphs?

  • A
    Option A
  • B
    Option B
  • C
    Option C
  • D
    Option D

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Similar Questions

Assertion: $A$ $p-n$ junction with reverse bias can be used as a photo-diode to measure light intensity.
Reason: In a reverse bias condition,the current is small but is more sensitive to changes in incident light intensity.

The given characteristic curve is related to which electronic device?

Consider the following statements $A$ and $B$ and identify the correct answer:
$A$. For a solar-cell,the $I-V$ characteristics lies in the $IV$ quadrant of the given graph.
$B$. In a reverse biased $pn$ junction diode,the current measured in $(\mu A)$ is due to majority charge carriers.

Identify the incorrect statement.

Conductivity of a photodiode starts changing only if the wavelength of incident light is < 660 \, nm. The band gap of the photodiode is found to be $\left(\frac{x}{8}\right) eV$. The value of $x$ is: (Given, $h=6.6 \times 10^{-34} \, Js, c=3 \times 10^8 \, m/s, e=1.6 \times 10^{-19} \, C$)

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