The addition of antimony atoms to a sample of intrinsic germanium transforms it into a material which is:

$A$ $Ge$ specimen is doped with $Al$. The concentration of acceptor atoms is $10^{21} \text{ atoms}/m^3$. Given that the intrinsic concentration of electron-hole pairs is $10^{19} /m^3$, the concentration of electrons in the specimen is:

$A$ transistor is a/an

Let $n_e$ be the number density of electrons and $v_d$ be the drift velocity in a semiconductor. When the temperature is increased:

An $n$-type and a $p$-type silicon semiconductor can be obtained by doping pure silicon with

$A$ pure $Si$ crystal has $5 \times 10^{28}$ atoms $m^{-3}$. It is doped with $1 \, ppm$ concentration of pentavalent $As$. The number of holes is (Take $n_i = 1.5 \times 10^{16} \, m^{-3}$)