The depletion layer in p-n junction region is | vedclass

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(C) The correct option is $C$. When a $p-n$ junction is formed,there is a high concentration of electrons in the $n$-region and a high concentration o

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diffusion of charge carriers.

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(C) The correct option is $C$. When a $p-n$ junction is formed,there is a high concentration of electrons in the $n$-region and a high concentration of holes in the $p$-region. Due to this concentration gradient,electrons diffuse from the $n$-side to the $p$-side,and holes diffuse from the $p$-side to the $n$-side. As these charge carriers cross the junction,they recombine near the junction interface. This recombination leaves behind immobile ionized impurity atoms (positive ions on the $n$-side and negative ions on the $p$-side),which create an electric field that opposes further diffusion. This region,depleted of mobile charge carriers,is known as the depletion layer.

The depletion layer in $p-n$ junction region is caused by

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