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(A) $PN$ junction diode consists of a $P$-type and an $N$-type semiconductor joined together,creating a depletion region and a barrier potential at th

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The value of forward bias should be more than the barrier potential.

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(A) $PN$ junction diode consists of a $P$-type and an $N$-type semiconductor joined together,creating a depletion region and a barrier potential at the junction.In a forward bias condition,the positive terminal of the external battery is connected to the $P$-side and the negative terminal to the $N$-side.This external voltage opposes the internal barrier potential.For the diode to conduct current significantly,the applied forward bias voltage must overcome the barrier potential.Therefore,the forward bias voltage must be greater than the barrier potential (e.g.,$\approx 0.7 \ V$ for Silicon and $\approx 0.3 \ V$ for Germanium).

To make a $PN$ junction conducting,what condition must be met?

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