When a forward bias is applied to a p-n junct | vedclass

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(B) In a $p-n$ junction,the potential barrier is created by the depletion region,which opposes the flow of majority charge carriers.When a forward bia

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decreases

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(B) In a $p-n$ junction,the potential barrier is created by the depletion region,which opposes the flow of majority charge carriers.When a forward bias is applied,the positive terminal of the battery is connected to the $p$-side and the negative terminal to the $n$-side.This external electric field opposes the internal electric field of the depletion region.As a result,the width of the depletion region decreases,which leads to a reduction in the potential barrier height.Therefore,the potential barrier decreases.

When a forward bias is applied to a $p-n$ junction,what happens to the potential barrier?

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