Which of the following statements is not true?

  • A
    The resistance of an intrinsic semiconductor decreases with an increase in temperature.
  • B
    Doping pure $Si$ with trivalent impurities gives $p$-type semiconductor.
  • C
    The majority carriers in $n$-type semiconductors are holes.
  • D
    $A$ $p-n$ junction can act as a semiconductor diode.

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Similar Questions

Consider an $n$-type semiconductor in which $n_e$ and $n_h$ are the number of electrons and holes,respectively.
$(A)$ Holes are minority carriers.
$(B)$ The dopant is a pentavalent atom.
$(C)$ $n_e n_h \neq n_i^2$ (where $n_i$ is the number of electrons or holes in the semiconductor when it is in its intrinsic form).
$(D)$ $n_e n_h \geq n_i^2$.
$(E)$ The holes are not generated due to the donors.
Choose the correct answer from the options given below.

What is an acceptor impurity? Write the names of such impurities.

In a $P$-type semiconductor, the acceptor level is $57 \, meV$ above the valence band. What is the wavelength of light in $\mathring{A}$ required to create a hole? (Given: $h = 6.6 \times 10^{-34} \, J \cdot s$, $c = 3 \times 10^8 \, m/s$, $1 \, eV = 1.6 \times 10^{-19} \, J$)

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When an $N-$type semiconductor is heated,what happens to the charge carriers?

In which of the following statements is the obtained impure semiconductor of $p$-type?

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