In which of the following statements is the obtained impure semiconductor of $p$-type?

  • A
    Germanium is doped with bismuth
  • B
    Silicon is doped with antimony
  • C
    Germanium is doped with gallium
  • D
    Silicon is doped with phosphorus

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$A$ silicon specimen is made into a $p$-type semiconductor by doping,on an average,one indium atom per $5 \times 10^7$ silicon atoms. If the number density of atoms in the silicon specimen is $5 \times 10^{28} \text{ atoms } m^{-3}$,then the number of acceptor atoms in silicon per cubic centimeter will be:

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In a $p$-type semiconductor,which of the following statements is true?

What is the conductivity of a semiconductor sample having electron concentration of $5 \times 10^{18} \, m^{-3}$,hole concentration of $5 \times 10^{19} \, m^{-3}$,electron mobility of $2.0 \, m^2 \, V^{-1} \, s^{-1}$,and hole mobility of $0.01 \, m^2 \, V^{-1} \, s^{-1}$? (Take charge of electron as $1.6 \times 10^{-19} \, C$)

When the conductivity of a semiconductor is only due to breaking of covalent bonds, the semiconductor is called

Statement-$I$: By doping silicon semiconductor with pentavalent material,the electron density increases.
Statement-$II$: The $n$-type semiconductor has a net negative charge.
In the light of the above statements,choose the most appropriate answer from the options given below:

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