Statement-I: By doping silicon semiconductor | vedclass

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(A) Statement-$I$ is true: When a pentavalent impurity (like Phosphorus or Arsenic) is added to a silicon semiconductor,each impurity atom provides on

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Statement-$I$ is true but Statement-$II$ is false.

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(A) Statement-$I$ is true: When a pentavalent impurity (like Phosphorus or Arsenic) is added to a silicon semiconductor,each impurity atom provides one extra free electron to the crystal lattice. This significantly increases the electron density,making it an $n$-type semiconductor.Statement-$II$ is false: Although an $n$-type semiconductor has a higher concentration of electrons (negative charge carriers),the semiconductor material itself remains electrically neutral. This is because the total number of positive charges (protons in the nuclei of the silicon and impurity atoms) is equal to the total number of negative charges (electrons) in the crystal lattice.

Statement-$I$: By doping silicon semiconductor with pentavalent material,the electron density increases.
Statement-$II$: The $n$-type semiconductor has a net negative charge.
In the light of the above statements,choose the most appropriate answer from the options given below:

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Statement-$I$: By doping silicon semiconductor with pentavalent material,the electron density increases.Statement-$II$: The $n$-type semiconductor has a net negative charge.In the light of the above statements,choose the most appropriate answer from the options given below: