Which one of the following statements is true | vedclass

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(D) $p$-type semiconductor is formed by doping an intrinsic semiconductor with trivalent impurity atoms (like $Al$,$B$,$In$,etc.).These trivalent atom

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trivalent impurity and holes are majority carriers.

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(D) $p$-type semiconductor is formed by doping an intrinsic semiconductor with trivalent impurity atoms (like $Al$,$B$,$In$,etc.).These trivalent atoms create vacancies in the valence band,which are known as holes.In a $p$-type semiconductor,holes are the majority charge carriers,while electrons are the minority charge carriers.Therefore,the correct statement is that it is doped with trivalent impurity and holes are majority carriers.

Which one of the following statements is true? $A$ p-type semiconductor is doped with

Similar Questions

In an $n-$type semiconductor,which of the following statements is true?

$A$ $P$-type semiconductor is:

The acceptor level of a $p$-type semiconductor is $6 \ eV$ above the valence band. The maximum wavelength of light which can create a hole would be: (Given $hc = 1242 \ eV \ nm$) (in $nm$)

If the ratio of the number density of electrons to the number density of holes in a semiconductor is $7/5$ and the ratio of their currents is $7/4$,what is the ratio of their drift velocities?

In extrinsic $P$ and $N$-type semiconductor materials,the ratio of the impurity atoms to the pure semiconductor atoms is about

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