In a $P$-type semiconductor,the acceptor energy levels $E_A$ are located:

In a semiconductor,the concentrations of electrons and holes are $8 \times 10^{18} \, m^{-3}$ and $5 \times 10^{18} \, m^{-3}$ respectively. If the mobilities of electrons and holes are $2.3 \, m^2/V \cdot s$ and $0.01 \, m^2/V \cdot s$ respectively,then the semiconductor is:

In a $p$-type semiconductor,the acceptor level is at $50 \text{ meV}$ above the valence band. To produce one hole,the maximum wavelength of the light photon required is (Planck's constant,$h = 6.6 \times 10^{-34} \text{ Js}$ and speed of light in vacuum,$c = 3 \times 10^8 \text{ m/s}$) (in $\mu \text{m}$)

At a temperature of $500 \ K$,the intrinsic electron number density $(n_e)$ and hole number density $(n_h)$ in a pure semiconductor are equal to $1.5 \times 10^{16} \ m^{-3}$. Now,by adding indium impurity,the hole density $(n_h)$ increases to $4.5 \times 10^{22} \ m^{-3}$. This doped semiconductor is:

What is the conductivity of a semiconductor sample having electron concentration of $5 \times 10^{18} \, m^{-3}$,hole concentration of $5 \times 10^{19} \, m^{-3}$,electron mobility of $2.0 \, m^2 \, V^{-1} \, s^{-1}$,and hole mobility of $0.01 \, m^2 \, V^{-1} \, s^{-1}$? (Take charge of electron as $1.6 \times 10^{-19} \, C$)

Which of the following statements is correct for an $n$-type semiconductor?