A silicon sample is made into a p-type semico | vedclass

Name: Exam Paper Generator | JEE NEET Paper Generator | Vedclass
Brand: Vedclass
Rating: 5 (35 reviews)

Question

(C) The number density of silicon atoms is $n_{Si} = 5 	imes 10^{28} 	ext{ atoms/m}^3$.Given that one Indium atom is added for every $5 	imes 10^7$

Vedclass · Accepted Answer

$10^{15} 	ext{ atoms/cm}^3$

Vedclass · Answer

(C) The number density of silicon atoms is $n_{Si} = 5 	imes 10^{28} 	ext{ atoms/m}^3$.Given that one Indium atom is added for every $5 	imes 10^7$ silicon atoms,the number density of acceptor atoms $(n_A)$ in $	ext{m}^3$ is:$n_A = \frac{5 	imes 10^{28}}{5 	imes 10^7} = 10^{21} 	ext{ atoms/m}^3$.To convert this to $	ext{cm}^3$,we divide by $10^6$ (since $1 	ext{ m}^3 = 10^6 	ext{ cm}^3$):$n_A = \frac{10^{21}}{10^6} 	ext{ atoms/cm}^3 = 10^{15} 	ext{ atoms/cm}^3$.

$A$ silicon sample is made into a $p$-type semiconductor by doping. Indium atoms are added at a rate of one atom per $5 \times 10^7$ silicon atoms. If the number density of silicon is $5 \times 10^{28} \text{ atoms/m}^3$,calculate the number density of acceptor atoms per $\text{cm}^3$.

Similar Questions

If $n_e$ and $n_h$ are electron and hole concentrations in an extrinsic semiconductor and $n_i$ is the intrinsic carrier concentration, then:

The charge on a hole is equal to the charge of

Which of the following statements is incorrect?

If $n_e$ and $v_d$ are the number of electrons and drift velocity in a semiconductor, respectively, what happens when the temperature is increased?

In a $P$-type semiconductor,the acceptor energy levels $E_A$ are located:

Vedclass Test Series

Exam Paper Generator

Online Exam Module