$P$-type semiconductors are made by adding which impurity element?

In pure $Si$ at $300 \ K$,the concentration of electrons $(n_e)$ and holes $(n_h)$ is equal and is $1.5 \times 10^{16} \ m^{-3}$. If the concentration of holes $(n_h)$ increases to $3 \times 10^{22} \ m^{-3}$ after doping with Indium,calculate the concentration of electrons $(n_e)$ in the doped $Si$.

$P-$type semiconductor is formed when:

In a $p$-type semiconductor,which of the following statements is true?

$A$ semiconductor doped with a donor impurity is

Doping of intrinsic semiconductor is done: