In $P$-type semiconductors,the majority and minority charge carriers are respectively:

Explain the recombination coefficient of an intrinsic semiconductor and derive the relation $n_i^2 = n_e n_h$.

In a pure silicon crystal,the electron-hole concentration is $10^{16} \ m^{-3}$ at $301 \ K$. Now,$10^{21}$ atoms of phosphorus are added per cubic metre. The new hole concentration in silicon is (in per $m^3$):

Donor type impurity is found in

Germanium $(Ge)$ is doped with Aluminum $(Al)$. If the concentration of acceptor atoms is $N_A \cong 10^{21} \text{ atoms/m}^3$ and the intrinsic carrier concentration is $n_i = 10^{19} \text{ m}^{-3}$,then the concentration of electrons is:

The temperature $(T)$ dependence of resistivity $(\rho)$ of a semiconductor is represented by