In a $p-n$ junction solar cell,the value of photo-electromotive force produced by monochromatic light is proportional to the

Consider the following statements $A$ and $B$ and identify the correct answer:
$A$. For a solar-cell,the $I-V$ characteristics lies in the $IV$ quadrant of the given graph.
$B$. In a reverse biased $pn$ junction diode,the current measured in $(\mu A)$ is due to majority charge carriers.

The active area of a solar cell is $......$ so that the power obtained $......$.

The following graph represents:

$A$ solar cell is to be fabricated for efficient conversion of solar radiation to emf using material $A$. The solar cell is to be mechanically protected with the help of a coating using material $B$. If the band gap energy of materials $A$ and $B$ are $E_{A}$ and $E_{B}$ respectively,then which of the following choices is optimum for better performance of the solar cell?

$A$ $p-n$ photodiode is made of a material with a band gap of $2.0\, eV$. The minimum frequency of the radiation that can be absorbed by the material is nearly: