When a forward bias is applied to a $p-n$ junction, it . . . . . . .

  • A
    raises the potential barrier
  • B
    lowers the potential barrier
  • C
    reduces the majority carrier current to zero
  • D
    none of the above

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The $I-V$ characteristic of a $p-n$ junction diode is shown in the figure. Find the approximate dynamic resistance of the $p-n$ junction when a forward bias of $1 \text{ V}$ is applied. (in $\Omega$)

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