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(C) Germanium $(Ge)$ is a tetravalent semiconductor. Phosphorus $(P)$ is a pentavalent impurity (donor atom).When $Ge$ is doped with $P$,each $P$ atom

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More negative current carriers

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(C) Germanium $(Ge)$ is a tetravalent semiconductor. Phosphorus $(P)$ is a pentavalent impurity (donor atom).When $Ge$ is doped with $P$,each $P$ atom provides one extra free electron to the crystal lattice.These free electrons act as negative current carriers.Therefore,the doped material has more negative current carriers (electrons) compared to holes,making it an $n$-type semiconductor.Since the crystal remains electrically neutral as a whole,option $(c)$ is the most appropriate description of the carrier concentration.

When germanium is doped with phosphorus,the doped material has

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