Which one of the following statements is false?
- APure $Si$ doped with trivalent impurities gives a $p-$type semiconductor.
- BMajority carriers in an $n-$type semiconductor are holes.
- CMinority carriers in a $p-$type semiconductor are electrons.
- DThe resistance of an intrinsic semiconductor decreases with an increase in temperature.
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Similar Questions
If one indium atom is doped per $5 \times 10^7$ silicon atoms,and the number density of silicon atoms is $5 \times 10^{28} \, \text{atoms}/\text{m}^3$,find the number density of acceptor atoms in $\text{atoms}/\text{cm}^3$.
Difficult
View SolutionThe length of a germanium rod is $0.928 \ cm$ and its area of cross-section is $1 \ mm^2$. If for germanium $n_i = 2.5 \times 10^{19} \ m^{-3}$,$\mu_h = 0.15 \ m^2 V^{-1} s^{-1}$,and $\mu_e = 0.35 \ m^2 V^{-1} s^{-1}$,then the resistivity is:
What is an acceptor impurity? Write the names of such impurities.
Easy
View SolutionIn the energy band diagram of a material shown below,the open circles and filled circles denote holes and electrons respectively. The material is a/an
Which of the following statements is not true?
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