If a semiconductor photodiode can detect a photon with a maximum wavelength of $400\, nm$, then its band gap energy is (Given: Planck's constant $h = 6.63 \times 10^{-34}\, J \cdot s$, Speed of light $c = 3 \times 10^{8}\, m/s$) (in $ eV$)

For three circuit elements $A, B$ and $C$,following observations were made in lab:
$(a)$ element $A$ cannot conduct $d.c.$ but allows $a.c.$ through it.
$(b)$ element $B$ conducts both $AC$ and $DC$ but in one direction only.
$(c)$ Element $C$,when connected across $DC$,conducts only for one polarity and emits light whose intensity first increases and then decreases with increase in applied voltage.
The elements $A, B$ and $C$ are respectively identified as

In a photodiode,the value of the $emf$ produced by a monochromatic light beam is directly proportional to

$A$ $p-n$ photodiode is made of a material with a band gap of $2.0\, eV$. The minimum frequency of the radiation that can be absorbed by the material is nearly:

Assertion $(A)$: $Si$ and $GaAs$ are the preferred materials for solar cells.
Reason $(R)$: Both these materials have energy band gaps much below the energy level corresponding to the maximum solar irradiance in the solar spectrum.

$A$ photodetector is made from a semiconductor $In_{0.53}Ga_{0.47}As$ with $E_g = 0.73 \, eV$. What is the maximum wavelength,which it can detect in $nm$?