When a silicon $PN$ junction is in forward biased condition with a series resistance,it has a knee voltage of $0.6\, V$. The current flowing through it is $5\, mA$ when the $PN$ junction is connected to a $2.6\, V$ battery. The value of the series resistance is.....$\Omega$.

Consider the following statements $A$ and $B$ and identify the correct choice from the given answers:
$A:$ The width of the depletion layer in a $P-N$ junction diode increases in forward bias.
$B:$ In an intrinsic semiconductor,the Fermi energy level is exactly in the middle of the forbidden gap.

Consider a $p-n$ junction as a capacitor, formed with $p$ and $n$-materials acting as thin metal electrodes and depletion layer width acting as separation between them. Basing on this, assume that an $n-p-n$ transistor is working as an amplifier in $CE$ configuration. If $C_1$ and $C_2$ are the base-emitter and collector-emitter junction capacitances, then :

The $I-V$ characteristic of a $P-N$ junction diode is shown in the figure. The approximate dynamic resistance of the $P-N$ junction when a forward bias of $1\;V$ is applied is.......$\Omega$.

The example for non-ohmic resistance is

If a $p-n$ junction diode is in forward bias,then: